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SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 40lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter G - SMPS * NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Pb-free lead plating; RoHS compliant 1 * Qualified according to JEDEC for target applications * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 C
2
C
E
PG-TO-247-3-21 (TO-247AC)
VCE 1200V
IC 25A
Eoff 2.9mJ
Tj 150C
Marking K25N120
Package PG-TO-247-3-21
Symbol VCE IC
Value 1200 46 25
Unit V A
ICpul s IF
84 84
42 25 IFpul s VGE tSC Ptot 80 20 10 313 V s W
VGE = 15V, 100VVCC 1200V, Tj 150C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06
Power Semiconductors
SKW25N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 15 0 0 A VCE(sat) V G E = 15 V , I C = 25 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 2 5 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current . Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance Measured 5mm (0.197 in.) from case Short circuit collector current
1)
Symbol RthJC RthJCD RthJA
Conditions
Max. Value 0.4 1.15 40
Unit K/W
Symbol
Conditions
Value min. 1200 typ. max. -
Unit
V
2.5 -
3.1 3.7 2.0
3.6 4.3 2.5 5 A
3
1.75 4
VGE(th) ICES
I C = 10 0 0 A , VCE=VGE V C E =1200V,V G E =0V T j =2 5 C T j =1 5 0 C
-
20
350 1400 100 2600 310 130 300 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E =0V,V G E =20V V C E = 20 V , I C = 25 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =2 5 A V G E = 15 V
-
2150 260 110 225 13 240
V G E = 15 V ,t S C 10 s 10 0 V V C C 12 0 0 V, T j 1 5 0 C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s 2 Rev. 2_1 Apr 06
Power Semiconductors
SKW25N120
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F Qrr Irrm d i r r /d t T j =2 5 C , V R = 8 00 V , I F = 2 5 A, d i F / d t =6 5 0 A/ s 1.0 20 470 C A A/s 90 ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 80 0 V, I C = 2 5 A, V G E = 15 /0 V , R G = 22 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. 45 40 730 30 2.2 1.5 3.7 60 52 950 39 2.9 2.0 4.9 mJ ns Symbol Conditions Value Min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F
1)
Symbol
Conditions
Value Min. typ. 50 36 820 42 3.8 2.9 6.7 max. 60 43 990 50 4.6 3.8 8.4
Unit
td(on) tr td(off) tf Eon Eoff Ets
T j =1 5 0 C V C C = 80 0 V, I C = 2 5 A, V G E = 15 /0 V , R G = 22 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. T j =1 5 0 C V R = 8 00 V , I F = 2 5 A, d i F / d t =7 5 0 A/ s
ns
mJ
-
280
ns
Qrr Irrm d i r r /d t
4.3 32 130
C A A/s
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2_1
Apr 06
SKW25N120
100A
Ic
100A
tp=1s 15s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
10A
50s 200s 1ms
60A
TC=80C
40A TC=110C 20A
1A DC 0.1A
Ic
0A 10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 22)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
350W 300W 250W 200W 150W 100W 50W 0W 25C
60A
50A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
40A
30A
20A
10A
50C
75C
100C
125C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Rev. 2_1
Apr 06
SKW25N120
80A 70A 60A 80A 70A 60A
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 0V
15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
V G E =17V
V G E =17V 15V 13V 11V 9V 7V
50A 40A 30A 20A 10A 0A 0V
1V
2V
3V
4V
5V
6V
7V
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
70A 60A
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
80A
6V
5V
IC=50A
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 3V
4V IC=25A IC=12.5A
Tj=+150C Tj=+25C Tj=-40C
3V
2V
1V
4V
5V
6V
7V
8V
9V
10V 11V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2_1
Apr 06
SKW25N120
1000ns td(off)
1000ns
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns tf tr td(on)
td(on)
tr
10ns
0A
20A
40A
60A
10ns 0
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 2 2, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 25A, dynamic test circuit in Fig.E )
6V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
1000ns td(off)
5V max.
t, SWITCHING TIMES
4V
100ns td(on) tr tf 10ns -50C
3V
typ.
2V
min.
1V
0C
50C
100C
150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 25A, RG = 22, dynamic test circuit in Fig.E )
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
6
Rev. 2_1
Apr 06
SKW25N120
25mJ
*) Eon and Ets include losses due to diode recovery.
10mJ Ets*
*) Eon and Ets include losses due to diode recovery.
Ets*
E, SWITCHING ENERGY LOSSES
15mJ
E, SWITCHING ENERGY LOSSES
20mJ
8mJ
Eon*
6mJ Eon* 4mJ Eoff
10mJ Eoff 5mJ
2mJ
0mJ
0A
20A
40A
60A
0mJ
0
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 2 2, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 25A, dynamic test circuit in Fig.E )
8mJ
*) Eon and Ets include losses due to diode recovery.
6mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
Ets*
D=0.5
E, SWITCHING ENERGY LOSSES
-1 10 K/W 0.2
0.1 0.05
4mJ
Eon*
2mJ
Eoff
10 K/W 0.02 0.01
-2
R,(K/W) 0.07417 0.20899 0.08065 0.03681
R1
, (s) 0.4990 0.08994 0.00330 0.00038
R2
0mJ -50C
0C
50C
100C
150C
10 K/W 1s
-3
single pulseC 1 = 1 / R 1 C 2 = 2 /R 2 10s 100s 1ms 10ms 100ms 1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 25A, RG = 22, dynamic test circuit in Fig.E )
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
7
Rev. 2_1
Apr 06
SKW25N120
20V
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
10V
UCE=960V
5V
C, CAPACITANCE
1nF
Coss
0V 0nC
100nC
200nC
300nC
100pF 0V
Crss 10V 20V 30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 25A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
30s
500A
tsc, SHORT CIRCUIT WITHSTAND TIME
25s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
400A
20s
300A
15s
200A
10s
5s
100A
0s 10V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100VVCE 1200V, TC = 25C, Tj 150C)
Power Semiconductors
8
Rev. 2_1
Apr 06
SKW25N120
500ns 5C
300ns
IF=25A
Qrr, REVERSE RECOVERY CHARGE
400ns
4C
IF=25A
trr, REVERSE RECOVERY TIME
3C
IF=12A
2C
200ns
IF=12A
100ns
1C
0ns 300A/s
500A/s
700A/s
900A/s
0C 300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
50A
400A/s
d i r r /d t, DIODE PEAK RATE OF FALL
IF=25A
30A
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
40A
300A/s
IF=12A
200A/s
20A
IF=12A
IF=25A
100A/s
10A
0A 300A/s
500A/s
700A/s
900A/s
0A/s 300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
Power Semiconductors
9
Rev. 2_1
Apr 06
SKW25N120
80A 3.0V
IF=50A
2.5V 60A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
TJ=150C
40A
2.0V
IF=25A
1.5V
TJ=25C
20A
1.0V
IF=12A
0.5V
0A 0V
1V
2V
3V
4V
0.0V 0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
10 K/W
D=0.5
0
0.2 0.1
-1 10 K/W 0.05
R,(K/W) 0.05339 0.40771 0.22473 0.46420
R1
, (s) 0.30438 0.09698 0.00521 0.00042
R2
0. 01
single pulse 10 K/W 10s
-2
0. 02
C 1 = 1 / R 1 C 2 = 2 /R 2
100s
1ms
10ms
100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
10
Rev. 2_1
Apr 06
SKW25N120
PG-TO247-3-21
Power Semiconductors
11
Rev. 2_1
Apr 06
SKW25N120
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF.
Power Semiconductors
12
Rev. 2_1
Apr 06
SKW25N120
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/10/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2_1
Apr 06

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